Bipolar Charge Plasma Transistor

Description: 

The invention of bipolar junction transistor (BJT) in 1948 by William Shockley led to the present day integrated circuit revolution. However, since its invention, bipolar transistors could not be made without doping the semiconductor multiple times to create the emitter, base and collector regions. Doping leads to defects and thermal budget concerns in modern CMOS technology. Can a bipolar transistor be made without any doping? At IIT Delhi, we have been working on a concept in which a bipolar transistor can be fabricated in an intrinsic undoped semiconductor without the need for any doping. We have named this new device as "Bipolar Charge Plasma Transistor". Our concept has important applications in future CMOS technology with even the possibility realizing BJTs on glass substrates and semiconductor nanowires. IIT Delhi has applied for a patent on this invention and a full length paper on this idea can be read in IEEE Transactions on Electron Devices, April 2012 issue.

Contact details: 

Prof. M. Jagadesh Kumar

Department of Electrical Engineering

mamidala@ieee.org